METHOD FOR DEPOSITING SILICON CRYSTAL AND SILICON CRYSTAL MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a silicon crystal material in which a silicon crystal is deposited in a desired size (length, width), planar shape or alignment in the surface layer of a silicon oxide substrate 1 and which can be utilized in various applications such as semiconductor devices, chemical sensors or biosensors. SOLUTION: A metal film 2 of an element having an electronegativity lower than that of silicon is formed in an arbitrary planar shape on the surface of the silicon oxide substrate 1 by vacuum vapor deposition or laser ablation. Thereafter, the silicon crystal is deposited in the surface layer forming an interface with the metal film 2 of the silicon oxide substrate 1 by subjecting the silicon oxide substrate 1 on which the metal film 2 is formed to a heat treatment in vacuum or an inert gas atmosphere to reduce silicon oxide. COPYRIGHT: (C)2007,JPO&INPIT