Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device

摘要

To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R¹ and R² is replaced by a substitutent capable of absorbing exposure light. (where R¹ and R² may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater) (where R¹, R² and R³ may be the same or different, at least one of R¹, R² and R³ represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)