| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a deposition film by which an improvement of a conversion efficiency can be compatible with a suppression of a photo degradation at a high level by optimizing a forming qualification of the deposited film, and an optimal deposited film forming condition searched by an experimental device can be easily diverted to production apparatus or the like. <P>SOLUTION: In the method of forming the deposited film including microcrystalline silicon by a plasma CVD method, at least one of conditions is changed between a condition for forming the deposited film in a microcrystalline region and a qualification for forming the deposited film in an amorphous region as chosen from a high-frequency electric power density, a bias voltage to an interelectrode distance, a bias current to an electrode area, a high-frequency electric power to a material gas flow rate, a ratio of a diluent gas flow rate to the material gas flow rate, a substrate temperature, pressure, and the interelectrode distance. In this case, a formation of the deposited film is performed under a condition of a decided range very closed to a boundary condition in which a crystal system of the deposited film is substantially changed by an amorphous and a microcrystal. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
