发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, in which a laminated film including an inter-layer insulating film is prevented from peeling at a wafer end edge part in the manufacturing process of the semiconductor device using the inter-layer insulating film of low adhesion, and to provide a semiconductor substrate. SOLUTION: When removing the inter-layer insulating film 4 formed on a bevel part BV1, polishing is performed to a part indicated by a line L1, and not only the inter-layer insulating film 4 but also a part of the semiconductor substrate 1 are removed. An angleαformed by the line L1 with the main surface of the semiconductor substrate 1 is set to be >0°and≤30°and is appropriately set matched with the angle of the bevel part BV1 of the semiconductor substrate 1. A polishing drum RD is constituted by sticking polishing cloth to the side face of a cylindrical drum, and polishing is performed by pressing the polishing drum RD to the end edge part of the semiconductor substrate 1 while rotating the drum around a center shaft and also rotating the semiconductor substrate 1 in-plane. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007208161(A) 申请公布日期 2007.08.16
申请号 JP20060027880 申请日期 2006.02.06
申请人 RENESAS TECHNOLOGY CORP;MATSUSHITA ELECTRIC IND CO LTD 发明人 OSHITA HIROSHI;KOBAYASHI KENJI
分类号 H01L21/304;B24B9/00;H01L21/3205;H01L23/52 主分类号 H01L21/304
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