| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device where the intrusion of impurities into a gate insulation film can be suppressed, and element defects can be removed, while the fixed charge free of the gate insulation film, the generation of a leak or the like can be suppressed. SOLUTION: In the method for producing a semiconductor device where a gate insulation film is formed on a silicon single crystal substrate, regarding the gate insulation film, on the surface of the silicon single crystal substrate exchanged to an OH group using an ammonium hydroxide gas and a compound gas of hafnium, a film composed of a multiple oxide of Si and Hf is formed by heat-treating the oxide-hydroxide of a metal formed by a specified reaction in an oxidizing atmosphere. COPYRIGHT: (C)2007,JPO&INPIT
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