发明名称 |
A CMOS IMAGER PHOTODIODE WITH ENHANCED CAPACITANCE |
摘要 |
A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
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申请公布号 |
US2007187734(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20060276085 |
申请日期 |
2006.02.14 |
申请人 |
ADKISSON JAMES W;ELLIS-MONAGHAN JOHN J;JAFFE MARK D;PEARSON DALE J;ROGERS DENNIS L |
发明人 |
ADKISSON JAMES W.;ELLIS-MONAGHAN JOHN J.;JAFFE MARK D.;PEARSON DALE J.;ROGERS DENNIS L. |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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