Minimizing low-k dielectric damage during plasma processing

摘要

Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A method comprises a short (<=2 sec) flash activation of an ILD surface followed by flowing a precursor such as silane, DEMS, over the activated ILD surface. The precursor reacts with the activated ILD surface thereby selectively protecting the ILD surface. The protected ILD surface is resistant to plasma processing damage. The protected ILD surface eliminates the requirement of using a hard mask to protect a dielectric from plasma damage.