发明名称 |
SEMICONDUCTOR DEVICE HAVING SUFFICIENT PROCESS MARGIN AND METHOD OF FORMING SAME |
摘要 |
According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.
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申请公布号 |
US2007190812(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20070737675 |
申请日期 |
2007.04.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYOO MAN-HYOUNG;YEO GI-SUNG;LEE SI-HYEUNG;KIM GYU-CHUL;JUNG SUNG-GON;PARK CHANG-MIN;CHO HOO-SUNG |
分类号 |
H01L21/027;G11C11/34;G11C11/412;H01L27/02;H01L27/11 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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