| 摘要 |
A thin film transistor substrate and a fabricating method thereof wherein a contacting size between an electrode and an active layer can be reduced to provide a small and light panel. In the thin film transistor substrate, a conductive layer is formed on the substrate. A first insulating layer for insulating the conductive layer overlies the conductive layer. A second insulating layer that is different from the first insulating layer overlies the first insulating layer. A third insulating layer overlies the second insulating layer. A contact through the first, second, and third insulating layers exposes a portion of the conductive layer and has a trapezoidal section. An electrode is connected to the conductive layer and overlies a portion of an inclined face of the contact hole. The inclined face of the contact hole includes a protrusion formed by a portion of the second insulating layer and creates an overhang structure.
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