发明名称 |
METHOD OF FORMING A SEMICONDUCTOR DEVICE |
摘要 |
<p>A method for forming a semiconductor device includes providing a semiconductor substrate (12) having a first doped region and a second doped region, providing a dielectric (14) over the first doped region and the second doped region, and forming a first gate stack (26) over the dielectric over at least a portion of the first doped region. The first gate stack includes a metal portion (18) over the dielectric, a first in situ doped semiconductor portion (22) over the metal portion, and a first blocking cap (23) over the in situ doped semiconductor portion. The method further includes performing an implant to form source/drain regions adjacent the first gate stack, where the first blocking cap has a thickness sufficient to substantially block dopants from the implant from entering the first in situ doped semiconductor portion.</p> |
申请公布号 |
WO2007092653(A2) |
申请公布日期 |
2007.08.16 |
申请号 |
WO2007US60145 |
申请日期 |
2007.01.05 |
申请人 |
FREESCALE SEMICONDUCTOR INC.;ZHANG, DA;NGUYEN, BICH-YEN |
发明人 |
ZHANG, DA;NGUYEN, BICH-YEN |
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