BiCMOS component production method, involves masking emitter window of former bipolar element and base layer is illuminated in base zone of latter bipolar element with auxiliary emitter implant by associated emitter window

摘要

The method involves separation of a dielectric layer (24) over a semiconductor layer (14). The photo resistant layer is removed in the emitter zone of the two bipolar elements to form two emitter windows. The emitter window of the former bipolar element is masked and base layer (32) is illuminated in the base zone (30) of the latter bipolar element with an auxiliary emitter implant by the associated emitter window.