| 摘要 |
<p>A non-volatile memory device and its manufacturing method are provided to increase an integration degree in an EEPROM by reducing the size of a tunneling insulating layer. A non-volatile memory device(180) includes a conductive protrusion structure(114) and a gate stacked structure. The conductive protrusion structure is formed on an upper surface of a substrate. The gate stacked structure is formed on the conductive protrusion structure and the substrate. The gate stacked structure further includes a tunneling insulating layer(115), a gate insulating layer, a floating gate(132), and a control gate. The tunneling insulating layer is formed on the conductive protrusion structure. The gate insulating layer is formed on the upper surface of the substrate outside the conductive protrusion structure. The floating gate is formed in the gate insulating layer and on the tunneling insulating layer. The control gates are formed on the floating gate with a gate insulating layer between them.</p> |
