发明名称 SEMICONDUCTOR MEMORY DEVICE FOR DRIVING SELECTIVELY REPEATERS FOR THE USE OF GLOBAL INPUT AND OUTPUT LINES ACCORDING TO INPUT AND OUTPUT DATA WIDTH AND SELECTED BANK
摘要 A semiconductor memory device for selectively driving repeaters for global input/output lines according to input/output data width and a selected bank is provided to reduce unnecessary power consumption by selecting a global input/output line corresponding to the input/output data width and enabling the repeater only when data input/output through the selected global input/output line is needed to pass through the repeater. First memory banks(MB1~MBJ) share global input/output lines. Second memory banks(MB(J+1)~MBK) share sub global input/output lines. A GIO(Global Input and Output) repeater part(102) outputs output data received from the sub global input/output lines of a part or all of first to fourth groups to the global input/output lines of a part or all of the first to fourth groups, or outputs input data received from the global input/output lines of a part or all of the first to fourth groups to the sub global input/output lines of a part or all of the first to fourth groups, in response to first to fourth repeater selection signals. A control signal generator(101) generates the first to fourth repeater control signals, in response to data width determination signals and first and second control signals. A logic level of the data width determination signals is changed according to the selected input/output data width of the semiconductor memory device.
申请公布号 KR100751674(B1) 申请公布日期 2007.08.16
申请号 KR20060035000 申请日期 2006.04.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JEE YUL
分类号 G11C7/10 主分类号 G11C7/10
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