发明名称 FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a cleaning method where reaction by-products composed of titanium chloride can be efficiently removed without using plasma. SOLUTION: Regarding the cleaning method where a titanium chloride M stuck to the inside of a treatment vessel 4 for performing film deposition to a substrate W is removed, in a state of heating the inside of the treatment vessel to≥130°C, the titanium chloride is removed using a ClF based gas as a cleaning gas. In this way, the titanium chloride is swiftly and efficiently removed. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007204855(A) 申请公布日期 2007.08.16
申请号 JP20070133570 申请日期 2007.05.20
申请人 TOKYO ELECTRON LTD 发明人 TADA KUNIHIRO;YOSHIKAWA HIDEKI
分类号 C23C16/44 主分类号 C23C16/44
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