| 摘要 |
To provide a single-ended-output-type level shift circuit capable of improving an increase in a delay time according to a voltage level shift operation at low voltage and suppressing an increase in an area occupied by the circuit, first and second inverters 300 and 200 of a CMOS type in which a gate of each MOS transistor is individually driven are provided and the first inverter 300 is used as a level converting unit. A voltage level of a first control signal CS 1 output from an output node no1 of the first inverter 300 is forcibly dropped down by a voltage dropping circuit CONT 1 so as to accelerate the operation of the second inverter 200 . As a result, the inversion of the level of an output signal of the first inverter 300 is accelerated. Further, the balance between current capabilities of the individual transistors is optimized and, in particular, the sizes of the transistors constituting the second inverter 200 are reduced so as to suppress an increase in a circuit area.
|
