发明名称 |
Double-diffused-drain MOS device with floating non-insulator spacer |
摘要 |
A double-diffused-drain metal-oxide-semiconductor device has a gate structure overlying a semiconductor substrate, a pair of insulator spacers on the sidewalls of the gate structure respectively, and a pair of floating non-insulator spacers embedded in the pair of insulator spacers respectively.
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申请公布号 |
US2007187784(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20060352791 |
申请日期 |
2006.02.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU HUA-SHU;HUNG FENG-CHI;CHEN HUNG-LIN;LEE SHIH-CHIN |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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