| 摘要 |
A non-volatile memory cell and method of fabrication are provided. The non-volatile memory cell includes a substrate of a first conductivity type, a first dopant region of a second conductivity type in the substrate, a second dopant region of the first conductivity type in the first dopant region, a first isolation region overlaying a portion of the substrate, the first dopant region, and the second dopant region, a second isolation region overlaying another portion of the substrate, the first dopant region, and the second dopant region, a contact region of the first conductivity type in the second dopant region, the contact region extending between the first isolation region and the second isolation region and being more heavily doped than the second dopant region, a gate dielectric atop the first isolation region and a portion of the contact region, and a gate conductor atop the gate dielectric.
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