发明名称 Monolithic RF circuit and method of fabricating the same
摘要 A monolithic radio frequency (RF) circuit and a method of fabricating the monolithic RF circuit are provided. The monolithic RF circuit includes: a base substrate; a filter part including first and second support layers formed on the base substrate, a first air gap formed between the first and second support layers, a first electrode formed on the second support layer and the first air gap, a first piezoelectric layer formed on the first support layer and the first electrode, and a second electrode formed on the first piezoelectric layer; and a switch part including a third support layer adjacent to the second support layer, a second air gap formed between the second and third support layers, a first switch electrode formed on the second air gap and the third support layer, and a second piezoelectric layer formed on the first switch electrode.
申请公布号 US2007188049(A1) 申请公布日期 2007.08.16
申请号 US20070649824 申请日期 2007.01.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG IN-SANG;KWON SANG-WOOK;KIM CHUL-SOO;PARK YUN-KWON
分类号 H01L41/00 主分类号 H01L41/00
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