| 摘要 |
A method of manufacturing a low-cost thin film transistor of minimized variations in performances, as well as the thin film transistor produced thereby. A thin film transistor manufacturing method including the steps of: forming a gate electrode on a substrate; forming a gate insulation layer on the gate electrode; forming a semiconductor layer by coating the gate insulation layer with a semiconductor material; forming a repellent layer having an electrode material-repellent characteristic on the semiconductor layer; applying light from the surface of the substrate where there is no gate electrode, thereby removing the semiconductor layer and the repellent layer by sublimation, except for the portion protected against light by the gate electrode; and dropping the fluid electrode material on the repellent layer remaining on the substrate so that the fluid electrode material is separated by the repellent layer, whereby the source electrode and the drain electrode are formed.
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