SEMICONDUCTOR DEVICE FABRICATED USING A RAISED LAYER TO SILICIDE THE GATE

摘要

In one aspect, the invention provides a method of fabricating a semiconductor device 200 that comprises forming a raised layer (510) adjacent a gate (340) and over a source/drain (415), depositing a silicidation layer (915) over the gate and the raised layer, and moving at least a portion of the silicidation layer into the source/drain through the raised layer.