SEMICONDUCTIVE DEVICE FABRICATED USING A TWO STEP APPROACH TO SILICIDE A GATE AND SOURCE/DRAINS
摘要
<p>In one aspect, the invention provides a method of fabricating a semiconductive device (200), comprising suiciding a gate (340) with a first silicidation layer (710), removing a protective layer (510) to expose source/drains (415), and suiciding the gate and the source/drains with a second silicidation layer.</p>
申请公布号
WO2007092749(A2)
申请公布日期
2007.08.16
申请号
WO2007US61512
申请日期
2007.02.02
申请人
TEXAS INSTRUMENTS INCORPORATED;RAMIN, MANFRED, B.;PAS, MIKE, F.
