SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided are a semiconductor device and a method for manufacturing the semiconductor device, by which on-resistance is reduced while suitably fixing impurity concentration distribution in an electrical field buffer region. The semiconductor device is provided with a substrate (1), a first drift layer (2), a second drift layer (3), a first well region (4a), a second well region (4b), a current control region (15) and the electrical field buffer region (8). The first well region (4a) is arranged continuously from an end section adjacent to a portion close to the outer circumference of the second drift layer (3) and the lower first drift layer (2) close to the outer circumference. The electrical field buffer region (8) is arranged on the first drift layer (2) so as to be adjacent to the first well region (4a).