NON-VOLATILE MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME

摘要

A non-volatile memory device and its manufacturing method are provided to improve a tunneling efficiency in a tunnel region of an EEPROM by defining the tunnel region by filling a conductive material into a groove which is defined during an etching process. A non-volatile memory device includes a gate insulating layer(122), a floating gate(124), a gate interlayer dielectric(126), a control gate(128), and a conductive pattern(118). The gate insulating layer is formed on a substrate. The floating gate is formed on the gate insulating layer. The gate interlayer dielectric is formed on the floating gate. The control gate is formed on the gate interlayer dielectric. The conductive pattern is protruded toward the floating gate from the substrate.