POROGEN, POROGENATED PRECURSOR AND METHOD FOR USING THE SAME TO PROVIDE POROUS ORGANOSILICA GLASS FILM WITH LOW DIELECTRIC CONSTANT

摘要

PROBLEM TO BE SOLVED: To provide a porous organosilica glass film which has a low dielectric constant, improved mechanical properties, thermal stability and chemical resistance.

SOLUTION: The produced porous organosilica glass film has a composition expressed by the formula SivOwCxHyFz, wherein v+w+x+y+z=100%; v is 10 to 35 atom%; w is 10 to 65 atom%; x is 5 to 30 atom%; y is 10 to 50 atom%; and z is 0 to 15 atom%. The production method comprises the steps of: introducing a precursor selected from the group consisting of organosilane and organosiloxane, and a gaseous reagent containing the porogen into a vacuum chamber; and applying energy to the gaseous reagent to make the gaseous reagent react and form a preliminary film on a substrate. The preliminary film has pores. Substantially all of the porogen are removed so as to obtain the porous film with a dielectric constant of less than 2.6.

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