| 摘要 |
A low-k dielectric layer is removed from a wafer to refresh the wafer. The low-k dielectric layer has a k value of less than about 3 and comprises silicon, oxygen and carbon. The method comprises fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material having a size of from about 1 to about 6 micrometers. Thereafter, the wafer can be polished by chemical mechanical polishing.
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