| 摘要 |
Method for fabricating semiconductor devices with high-K materials without the presence of undesired formations of the high-K material. A preferred embodiment comprises forming a layer of material over a layer of a high-K material, etching the layer of material to expose a portion of the high-K material, performing a CDE (Chemical Downstream Etch) to remove any residual material formed during the etching, and etching the layer of the high-K material into alignment with remaining portions of the layer of material. The removal of the residual material results in a predictable trimming of the high-K material so that the semiconductor device has predictable and consistent performance, which is not possible if the high-K material has unpredictable dimensions.
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