| 摘要 |
A silicon crystallization mask, a silicon crystallization device having the same, and a silicon crystallization method using the same are provided to improve an electrical characteristic of silicon by separating slits in a silicon crystallization mask at intervals ranging from 0.5 to 5 mum in a first direction. A transmission part(410) includes a plurality of slits transmitting light. A blocking part(420) is formed outside the transmission part and blocks light. The slits are separated at blocking intervals ranging from 0.5 to 5 mum in a first direction. The slits each have a rectangular shape. The slits include first sub-slits(412) separated at the blocking interval in the first direction, and second sub-slits(414) separated from the first sub-slits at predetermined intervals in a second direction perpendicular to the first direction, and separated from each other in the blocking interval. |
