发明名称 |
METHOD OF FABRICATING SUBSTRATES, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS---------------------------------------- |
摘要 |
The invention relates to a method for fabricating substrates (30), in particular for optics, electronics, or optoelectronics, by transferring a layer (170) of a material suitable for said type of application, and in particular a semiconductor material, onto a support (20). Said method is characterized in that it comprises the following steps : a) forming a flat face (13) termed the "front face" on a raw ingot (10) of material intended to form said layer (170); b) implanting atomic species beneath said front face (13) to a controlled mean implantation depth to create a zone of weakness (16) defining a top layer (17) of said ingot (10 ); c) bonding a support (20) onto said front face (13); d) directly detaching from the ingot (10), at the zone of weakness (16), the portion (170) of said top layer (17) which is bonded to said support (20); and e) re-commencing said cycle of operations from step b) at least once. Said method saves starting material. |
申请公布号 |
EP1537258(B1) |
申请公布日期 |
2007.08.15 |
申请号 |
EP20030763891 |
申请日期 |
2003.07.16 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
GHYSELEN, BRUNO;LETERTRE, FABRICE |
分类号 |
C30B33/00;H01L21/304;H01L21/00;H01L21/02;H01L27/12 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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