发明名称 Non-volatile memory device
摘要 <p>The device has standard logic gates e.g. NOR logic gates, provided with complementary reading/writing terminals (Q, Qb), and a bistable circuit supplied by a supply voltage (Vdd). A control input (RS) is connected to the circuit, where the input acquires a logic state that controls a pre-loading phase of the circuit independent of a rising phase of the supply voltage. The control input acquires another logic state that controls the establishment of a memory bit and its complement at the level of the reading/writing terminals.</p>
申请公布号 EP1818942(A1) 申请公布日期 2007.08.15
申请号 EP20070290181 申请日期 2007.02.13
申请人 STMICROELECTRONICS SA 发明人 DEDIEU, LAURENT;LEFEBVRE, SEBASTIEN
分类号 G11C11/412;H03K3/356 主分类号 G11C11/412
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