Method and circuit for timing dynamic reading of a memory cell with control of the integration time

摘要

The method for timing reading of a memory cell envisages supplying the memory cell (10) with a constant current (I) by means of a first capacitive element (23), integrating said current (I) in a time interval ( DELTA t), and controlling the duration of the time interval ( DELTA t) in such a way as to compensate for any deviations in the current (I) from a nominal value. In particular, a reference current (IR) is supplied to a reference cell (101) by means of a second capacitive element (122); next, a first voltage (Var) present on the second capacitive element (122) is measured; finally, the memory cell (10) is deactivated when the first voltage (Var) is equal to a second voltage (Vref), which is constant.