发明名称 |
SOI SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>A SOI substrate of high quality which allows LSI to be formed thereon in an improved yield and realizes excellent electric properties and a method for the production thereof are provided. The SOI substrate is obtained by forming an embedded oxide layer on a silicon single crystal substrate and forming a SOI layer for the formation of a device on the embedded oxide layer and is characterized by the SOI layer containing pit-like defects at a density of not more than 5 cm<-2> or the embedded oxide layer containing pinhole defects at a density of less than one piece/cm<2>. <IMAGE></p> |
申请公布号 |
EP1052687(A4) |
申请公布日期 |
2007.08.15 |
申请号 |
EP19990901218 |
申请日期 |
1999.02.02 |
申请人 |
NIPPON STEEL CORPORATION |
发明人 |
HAMAGUCHI, ISAO;IKARI, ATSUSHI;MATSUMURA, ATSUKI;KAWAMURA, KEISUKE;YANO, TAKAYUKI;NAGATAKE, YOICHI |
分类号 |
H01L21/265;H01L21/322;H01L21/762;(IPC1-7):H01L21/265;H01L27/12 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|