WIRING STRUCTURE IN A SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME, NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A metal line structure of a semiconductor device and a forming method thereof, a nonvolatile memory device and a manufacturing method thereof are provided to secure contact margin enough with a contact plug by using a line type conductive pattern with a large sized upper surface. An interlayer dielectric is formed on a substrate(100). The interlayer dielectric includes a first trench and a second trench. The first trench(108) is prolonged like a line type structure. The first trench has a first upper width. The second trench(110) is connected through a lower portion of the first trench. The second trench is prolonged like a line type structure. The second trench has a second upper width smaller than the first upper width. A conductive pattern(116) is formed in the first and second trenches. An upper interlayer dielectric is formed on the interlayer dielectric and the conductive pattern. A contact plug contacts partially an upper surface of the conductive pattern through the upper interlayer dielectric. The width of an upper portion is larger than that of a lower portion in the first trench.