发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 A semiconductor device is provided to form a miniaturized semiconductor device having excellent light penetration by increasing the quantity of incident light by a simple structure. A light receiving device region is formed on the main surface of a semiconductor substrate. A protrusion is arranged in the periphery of the light receiving device region on the main surface of the semiconductor substrate. An adhesive layer(35) is arranged on the outer circumference of the protrusion on the main surface of the semiconductor substrate. A transparent substrate is attached to the surface of the light receiving device region by the adhesive layer, supported by the protrusions. The protrusion part can be composed of first and second protrusions(36A,36B). The adhesive layer can be installed between the first and the second protrusions.
申请公布号 KR20070081069(A) 申请公布日期 2007.08.14
申请号 KR20060043796 申请日期 2006.05.16
申请人 FUJITSU LIMITED 发明人 YOSHIMOTO KAZUHIRO;SHIMOBEPPU YUZO;TESHIROGI KAZUO;SHINJO YOSHIAKI
分类号 H01L27/146 主分类号 H01L27/146
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