发明名称 Method for manufacturing liquid discharge head, substrate for liquid discharge head and method for working substrate
摘要 An ink supply port is opened in an Si substrate on which an ink discharge energy generating element is formed, by anisotropic etching, from a back surface opposite to a surface on which the ink discharge energy generating element is formed. When the anisotropic etching is effected, OSF (oxidation induced laminate defect) remaines on the back surface of the Si substrate with OSF density equal to or greater than 2x10<SUP>4 </SUP>parts/cm<SUP>2 </SUP>and a length of OSF equal to or greater than 2 mum.
申请公布号 US7255418(B2) 申请公布日期 2007.08.14
申请号 US20050299944 申请日期 2005.12.13
申请人 发明人
分类号 B41J2/015;B41J2/04;B41J2/05;B41J2/135;G01D15/00 主分类号 B41J2/015
代理机构 代理人
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