Structure and method to induce strain in a semiconductor device channel with stressed film under the gate

摘要

A semiconductor device is provided with a stressed channel region, where the stresses film causing the stress in the stress channel region can extend partly or wholly under the gate structure of the semiconductor device. In some embodiments, a ring of stress film surround the channel region, and may apply stress from all sides of the channel. Consequently, the stress film better surrounds the channel region of the semiconductor device and can apply more stress in the channel region.