MAGNETORESISTANCE DEVICE COMPRISING DIFFUSION BARRIER LAYER

摘要

A magnetoresistance device including a diffusion barrier layer is provided to prevent the diffusion of a main component when a magnetoresistance device is heated in a high temperature process or heated to a high temperature by interposing a diffusion barrier layer between an underlying layer and an anti-ferromagnetic layer. A magnetoresistance device includes a substrate, an underlying layer(21) is formed on the substrate, and a magnetoresistance structure formed on the underlying layer. A diffusion barrier layer(22) is interposed between the underlying layer and the magnetoresistance structure. The magnetoresistance structure can include an anti-ferromagnetic layer, a first ferromagnetic layer, a non-magnetic spacer layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the spacer layer. The magnetization direction of the first ferromagnetic layer is fixed by the anti-ferromagnetic layer. The magnetization direction of the second ferromagnetic layer can be changed.