发明名称 Method to eliminate plating copper defect
摘要 A method of forming a metal layer with reduced defects comprising providing a structure having a dielectric layer formed over it, forming a dielectric layer having an opening, lining the opening with a metal seed layer, treating the metal seed layer with a cleaning process to remove contaminates from it, and forming a metal layer upon the metal seed layer.
申请公布号 US7256120(B2) 申请公布日期 2007.08.14
申请号 US20040024917 申请日期 2004.12.28
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. 发明人 TSAO JUNG-CHIN;LIU CHI-WEN;FENG HSIEN-PING;CHENG HSI-KUEI;LIN STEVEN;CHENG MIN-YUAN
分类号 H01L21/4763 主分类号 H01L21/4763
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