发明名称 |
Semiconductor wafer treatment member |
摘要 |
There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 mum to 1.3 mum.
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申请公布号 |
US7255775(B2) |
申请公布日期 |
2007.08.14 |
申请号 |
US20030603781 |
申请日期 |
2003.06.26 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
YOKOGAWA MASANARI;HAGIHARA HIROTAKA;WAGATSUMA SHINYA;KITAYAMA KOUTAROU;FUJIWARA CHIEKO |
分类号 |
H01L21/306;C23C16/00;H01L21/687 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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