| 摘要 |
A method of fabricating a thin film transistor includes preparing an insulating substrate; forming a first amorphous silicon layer on the substrate; forming a diffusion barrier layer pattern on the first amorphous silicon layer; forming a second amorphous silicon layer over the whole surface of the substrate; forming a metal silicide layer on the second amorphous silicide layer; and heat-treating the substrate to form first and second polysilicon layers.
|
