发明名称 |
Resistance-reduced semiconductor device and methods for fabricating the same |
摘要 |
Semiconductor devices and methods for fabricating the same. The semiconductor device includes a resistance-reduced transistor with metallized bilayer overlying source/drain regions and gate electrode thereof. A first dielectric layer with a conductive contact overlies the resistance-reduced transistor. A second dielectric layer having a first conductive feature overlies the first dielectric layer. A third dielectric layer with a second conductive feature overlies the second dielectric layer, forming a conductive pathway down to the top surface of the metallized bilayer over one of the source/drain regions or the gate electrode layer.
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申请公布号 |
US7256498(B2) |
申请公布日期 |
2007.08.14 |
申请号 |
US20050190913 |
申请日期 |
2005.07.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG YI-CHUN;SHIEH JYU-HORNG;HSU JU-WANG |
分类号 |
H01L27/04;H01L21/28;H01L21/285;H01L21/336;H01L21/60;H01L29/06;H01L29/76;H01L31/062 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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