发明名称 ION IMPLANTER AND METHOD FOR DETECTING LOAD POSITION OF PLATEN USING THE SAME
摘要 Ion implantation equipment is provided to prevent breakdown caused by interference of a platen, a robot arm and a wafer by detecting slanting and vertical separation of the platen in a position that a substrate is loaded/unloaded into/from the platen and by re-adjusting the slanting and height of the platen. A cassette(110) in which a plurality of substrates are received is placed in a loadlock chamber(100) maintaining an initial state of low vacuum. An ion implantation process is performed on the substrate in a process chamber(200). A transfer chamber(300) transfers the substrate between the process chamber and the loadlock chamber, interposed between the loadlock chamber and the process chamber. A platen(212) on which the substrate is placed is installed in the process chamber. A first detection part senses the slanting of the platen in a position that the substrate is loaded/unloaded into/from the platen. A control part generates a predetermined control signal corresponding toe a detection signal transmitted from the first detection part. A driving part(214) receives the control signal of the control part and rotates and elevates the platen to a process position.
申请公布号 KR20070081036(A) 申请公布日期 2007.08.14
申请号 KR20060012745 申请日期 2006.02.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, BYUNG JAE;LEE, JONG KEUM;YOON, JIN HEE
分类号 H01L21/265;H01L21/687 主分类号 H01L21/265
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