NON-VOLATILE FLASH MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A non-volatile flash memory device is provided to prevent an interference phenomenon of a semiconductor device and the operation efficiency of a flash memory device from decreasing by preventing a decrease of an effective channel even if the flash memory device is reduced in size according to a design rule. An isolation layer is formed in a semiconductor substrate(110) to define an active region. The active region between the isolation layers is etched by a predetermined portion to form a pair of trenches(114). A tunnel insulation layer(115) is formed on the inner surface of the trench. The trench including the tunnel insulation layer is filled with a pair of floating gate electrodes. A pair of inter-gate dielectrics and a control gate conductive layer are formed on the semiconductor substrate including the floating gate electrode. The control gate conductive layer and the inter-gate dielectric are patterned to form an inter-gate dielectric pattern(117a) and a control gate electrode(118a) which is aligned with one side of the pair of floating gate electrodes while being aligned with a part of the substrate positioned in the opposite side to the one side of the floating gate electrode. The tunnel insulation layer and the floating gate electrode are formed in the semiconductor substrate. A source region(119s) can be formed in the substrate between the pair of floating gate electrodes. A drain region(119d) can be formed in the substrate including a part of the overlap region of the control gate electrode and the substrate.