发明名称 METHOD FOR ELECTRICAL TESTING OF SEMICONDUCTOR CAPABLE OF REAL-TIME DEFECT ANALYSIS
摘要 An electrical inspection method of a semiconductor device for a real-time defect analysis is provided to improve the exactness of an electrical inspection of the semiconductor device and to enhance efficiency of an inspection process. An electrical inspection is performed on a semiconductor device. An analysis program is processed when the number of defects is larger than a predetermined value in a predetermined inspection item of the electrical inspection and a next inspection item is processed when the number of defects is smaller than the predetermined value(S210,S310,S410). Semiconductor devices are sorted into good and bad products according to the inspection results. The electrical inspection on the semiconductor device is ended.
申请公布号 KR20070080972(A) 申请公布日期 2007.08.14
申请号 KR20060012575 申请日期 2006.02.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YI, JONG JIN;KIM, WOO JIN;KIM, HWANG SU;KWAK, JOO SEOK;KIM, DO KYUN
分类号 H01L21/66 主分类号 H01L21/66
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