A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.
申请公布号
US7256472(B2)
申请公布日期
2007.08.14
申请号
US20050521106
申请日期
2005.09.13
申请人
INFINEON TECHNOLOGIES AG
发明人
BOCK JOSEF;MEISTER THOMAS;ROMANYUK ANDRIY;SCHAEFER HERBERT