发明名称 ESD protection circuit and method
摘要 An electrostatic discharge (ESD) protection circuit and method thereof are presented. In some embodiments, a high voltage tolerant input/output circuit comprises an ESD detection circuit, a first first-type transistor, a first second-type transistor, and a second second-type transistor. The first first-type transistor and the first second-type transistor are coupled to a pad. The ESD detection circuit determines whether ESD occurs at the pad and, if so, couples the gates of the first and second second-type transistors to the second power rail.
申请公布号 US7256975(B2) 申请公布日期 2007.08.14
申请号 US20040867112 申请日期 2004.06.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WU YI-HSUN;LEE JIAN-HSING;CHEN SHUI-HUNG
分类号 H02H9/00;H02H3/20;H03K17/0814 主分类号 H02H9/00
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