| 摘要 |
<p>1,161,367. Semi-conductor devices. BROWN, BOVERI & CO. Ltd. 9 March, 1967 [11 March, 1966], No. 11234/67. Heading H1K. The diode shown has a semi-conductor element comprising a silicon disc 1 soldered to a molybdenum carrier-plate 4, the free faces of the disc and carrier-plate being coated respectively with layers of gold-antimony alloy 2 (to produce a PN junction) and soft solder 5. Spread of the gold-antimony alloy is limited by silicone rubber 3 protecting the edge of the disc. Perforated molybdenum discs 8 are placed between the two layers and their respective massive contacts 6, 7. These contacts are urged together so that during operation the perforated discs sink into the softened layers. The pores of the discs may be pre-filled with metal like that of the adjacent layers. The invention envisages devices having only one perforated disc.</p> |
