发明名称 SEMICONDUCTOR MEMORY DEVICE INCLUDING CIRCUIT FOR BLOCKING OPERATION OF BIAS CIRCUIT AND BIAS VOLTAGE GENERATING METHOD THEREOF
摘要 A semiconductor memory device comprising a bias circuit operation blocking circuit and a method for generating a bias voltage are provided to reduce power consumption in a self refresh mode without influencing the characteristics of analog circuits. In a semiconductor memory device comprising at least one analog circuit(24,25), a bias circuit(21) generates a bias voltage and then provides the bias voltage to the analog circuit. A blocking circuit(22) blocks the operation of the bias circuit during a self refresh mode of the semiconductor memory device. A current supply circuit(23) supplies a target current to the output stage of the bias circuit while the operation of the bias circuit is blocked by the blocking circuit.
申请公布号 KR20070080976(A) 申请公布日期 2007.08.14
申请号 KR20060012581 申请日期 2006.02.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JUN BAE
分类号 G11C5/14;G11C11/4074 主分类号 G11C5/14
代理机构 代理人
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