摘要 |
A semiconductor memory device comprising a bias circuit operation blocking circuit and a method for generating a bias voltage are provided to reduce power consumption in a self refresh mode without influencing the characteristics of analog circuits. In a semiconductor memory device comprising at least one analog circuit(24,25), a bias circuit(21) generates a bias voltage and then provides the bias voltage to the analog circuit. A blocking circuit(22) blocks the operation of the bias circuit during a self refresh mode of the semiconductor memory device. A current supply circuit(23) supplies a target current to the output stage of the bias circuit while the operation of the bias circuit is blocked by the blocking circuit.
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