发明名称 Process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination
摘要 A process for making photonic crystal circuit and a photonic crystal circuit consisting of regularly-distributed holes in a high index dielectric material, and controllably-placed defects within this lattice, creating waveguides, cavities, etc. for photonic devices. The process is based upon the discovery that some positive ultraviolet (UV) photoresists are electron beam sensitive and behave like negative electron beam photoresists. This permits creation of photonic crystal circuits using a combination of electron beam and UV exposures. As a result, the process combines the best features of the two exposure methods: the high speed of UV exposure and the high resolution and control of the electron beam exposure. The process also eliminates the need for expensive photomasks.
申请公布号 US7255804(B2) 申请公布日期 2007.08.14
申请号 US20040504518 申请日期 2004.08.13
申请人 UNIVERSITY OF DELAWARE 发明人 PRATHER DENNIS W.;MURAKOWSKI JANUSZ
分类号 G02B6/00;G02B6/12;G02B6/122;G02B6/134;G02B6/136;G03F7/00;G03F7/20 主分类号 G02B6/00
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