| 摘要 |
A TFT device, a method of manufacturing the same, a TFT substrate and a display device, making it possible to decrease the photolithography steps, to improve the productivity and to decrease the cost of production. There are formed on the same substrate a first n-ch TFT having an LDD region which is entirely covered with a gate electrode, a second n-ch TFT having an LDD region partially covered with a gate electrode, and a p-ch TFT. Here, electrically conducting thin films and a gate electrode are formed on the electrically conducting thin film and on the insulating film, phosphorus ions are implanted into source/drain regions of the n-ch TFTs using the electrically conducting thin films and gate electrode as masks, and a gate electrode is formed by etching the electrically conducting thin film by using the electrically conducting thin film as a mask.
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