发明名称 Process apparatus and method for improving plasma production of an inductively coupled plasma
摘要 A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space for containing a substrate to be processed with a plasma formed within the chamber. A dielectric window interfaces with the processing chamber proximate the processing space. A core element formed of a material having a high magnetic permeability is positioned outside of the chamber proximate the dielectric window, and an electrically conductive element surrounds a portion of the core element of high magnetic permeability. The conductive element, when electrical current is conducted thereby, is operable for coupling a magnetic flux into the chamber through the dielectric window for affecting a plasma in the processing space. The core element is configured for directing a portion of the magnetic flux in a direction toward the dielectric window to efficiently couple the channeled flux into the processing chamber through the dielectric window.
申请公布号 US7255774(B2) 申请公布日期 2007.08.14
申请号 US20020255460 申请日期 2002.09.26
申请人 TOKYO ELECTRON LIMITED 发明人 VUKOVIC MIRKO;SILL EDWARD L.
分类号 C23C16/00;H01J37/32;H01L21/306 主分类号 C23C16/00
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